| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB21NM50N is a second-generation MDmesh™ Power MOSFET. It features an N-channel enhancement mode with a drain-source breakdown voltage of 500V and a continuous drain current of 18A at 25°C.
This MOSFET boasts a low on-resistance of 190mOhm maximum at 9A and 10V, contributing to high efficiency in switching applications. It has a maximum power dissipation of 140W at 25°C and an operating junction temperature up to 150°C.
The device is housed in a TO-263-3, D²Pak package, suitable for surface mounting. Key electrical characteristics include a gate-source voltage range of ±25V and an input capacitance of 1950pF at 25V. The low input capacitance and gate charge make it suitable for demanding high-efficiency converters.
General features include 100% avalanche tested, low input capacitance, and low gate charge. The STB21NM50N is designed for various switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 500V, with a maximum rating of 550V at Tjmax.
The continuous drain current (Id) is 18A at TC=25°C, derated to 11A at TC=100°C.
The maximum on-resistance (Rds on) is 190mOhm at 9A drain current and 10V gate voltage.
The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current.
The maximum operating junction temperature (Tj) is 150°C.
It is available in a D2PAK (TO-263-3) surface mount package.
The gate charge (Qg) is 65nC at 10V gate voltage.