DistyParts Icon
STB20NM60T4 STB20NM60T4 is an N-Channel power MOSFET from STMicroelectronics with 600V drain-source voltage and 20A continuous drain current. It is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

STB20NM60T4

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STB20NM60T4 is an N-Channel power MOSFET from STMicroelectronics with 600V drain-source voltage and 20A continuous drain current. It is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 9,000 pcs
$ Price Range: $2.56

STB20NM60T4 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STB20NM60T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

STB20NM60T4 Description

Short technical summary and product information.

The STB20NM60T4 is an N-Channel enhancement-mode power MOSFET manufactured by STMicroelectronics using Metal Oxide semiconductor technology. It is designed for high-voltage switching applications requiring efficient power management.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at case temperature Tc. The device features a low on-resistance of 290mOhm maximum at 10A gate drive of 10V, enabling high efficiency in power conversion circuits. Gate charge is 54nC maximum at 10V, and input capacitance is 1500pF at 25V drain-source bias.

 

The MOSFET is offered in a TO-263-3 (D2PAK) surface-mount package, suitable for automated assembly processes. It supports a maximum power dissipation of 192W at case temperature and operates over a junction temperature range up to 150°C. The gate threshold voltage is 5V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±30V.

STB20NM60T4 Quick Information

Product Type: Power MOSFET
Canonical Name: STB20NM60T4 N-Channel 600V 20A Power MOSFET
Subcategory: N-Channel Power MOSFET

STB20NM60T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB20NM60T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB20NM60T4 Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 20A.
  • Low on-resistance of 290mOhm maximum.
  • Surface mount D2PAK (TO-263) package.
  • 192W maximum power dissipation at case temperature.

STB20NM60T4 Applications

  • Suitable for high-voltage power supply circuits.
  • Used in DC-DC converter and inverter stages.
  • Ideal for motor control and lighting applications.
  • Applicable in switch-mode power supplies (SMPS).

STB20NM60T4 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STB20NM60T4?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the STB20NM60T4?

The maximum continuous drain current (Id) is 20A at case temperature Tc.

What is the on-resistance of the STB20NM60T4?

The maximum drain-source on-resistance (Rds(on)) is 290mOhm at 10A drain current and 10V gate-source voltage.

What package does the STB20NM60T4 come in?

The STB20NM60T4 is offered in a TO-263-3 (D2PAK) surface-mount package.

What is the maximum operating junction temperature of the STB20NM60T4?

The maximum operating junction temperature (TJ) is 150°C.

Home
Account

Categories