| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,943 pcs
|
6943 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB20NM60-1 is an N-channel power MOSFET manufactured by STMicroelectronics. It features a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 20A, making it suitable for high-voltage power conversion circuits. The device is housed in an I2PAK (TO-262) through-hole package, which provides robust thermal performance and ease of mounting on heatsinks. This MOSFET is designed for applications such as switch-mode power supplies, motor drives, and inverters where efficient high-voltage switching is required. Its rugged design ensures reliable operation under demanding conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
I2PAK (TO-262).
20A.
N-channel.