| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB20NM50FDT4 is an N-Channel MOSFET with a maximum drain-source voltage of 500V and a continuous drain current of 20A. It features a low on-resistance of 250mOhm at 10A and 10V gate drive, with a gate charge of 53nC. The device operates at temperatures up to 150°C (TJ) and has an input capacitance of 1380pF.
This MOSFET utilizes Metal Oxide technology and is housed in a surface-mount D2PAK package (TO-263-3, D²Pak). Its high power dissipation capability of 192W (Tc) makes it suitable for various power switching applications. The gate threshold voltage is 5V at 250µA, and it supports a gate-to-source voltage of up to ±30V.
Designed for efficiency and reliability, the STB20NM50FDT4 is a robust component for power management circuits. Its specifications make it a viable option for applications requiring high voltage and current handling capabilities in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
TO-263-3 (D2Pak) surface-mount package.
150°C.
20 A at case temperature.
250 mOhm at 10 A gate drive of 10 V.
Maximum 53 nC at a gate voltage of 10 V.
±30 V.