| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,471 pcs
|
2471 pcs | On Request | 1 | On Request | On Request | 224 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB20NM50-1 is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 20A at case temperature.
This MOSFET offers a low on-resistance (Rds On) of 250mOhm at 10A and 10V, contributing to efficient power transfer. Key electrical characteristics include an input capacitance (Ciss) of 1480 pF and a gate charge (Qg) of 56 nC. The device operates within a temperature range of -65°C to 150°C (TJ).
Designed for through-hole mounting, the STB20NM50-1 comes in an I2PAK package, also known as TO-262-3 Long Leads or TO-262AA. This package type is suitable for applications requiring robust thermal performance and ease of assembly.
With a maximum power dissipation of 192W (Tc), this MOSFET is suitable for various power management tasks. The gate-source voltage (Vgs) maximum is ±30V, and the threshold voltage (Vgs(th)) is 5V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
550V.
20A.
250mOhm at 10A, 10V.
-65°C to 150°C.
TO-262-3 Long Leads, I²Pak, TO-262AA (I2PAK).
56nC at 10V.
1480pF at 25V.