STB20N65M5 The STMicroelectronics STB20N65M5 is an N-Channel MOSFET designed for high voltage applications. It features a 650V drain-source voltage and 18A continuous current.
Mfr Part #:

STB20N65M5

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB20N65M5 is an N-Channel MOSFET designed for high voltage applications. It features a 650V drain-source voltage and 18A continuous current.
✓ Total Stock: 4,026 pcs
$ Price Range: $2.56

STB20N65M5 Available from 3 distributors

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✓ Non-Authorised
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3,020 pcs
3020 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
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6 pcs
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STB20N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB20N65M5 Description

Short technical summary and product information.

The STMicroelectronics STB20N65M5 is a power MOSFET with an N-Channel configuration, rated for a drain-source voltage of 650V and a continuous drain current of 18A. It offers a low on-state resistance of 190mOhm at 9A and 10V gate-source voltage, ensuring efficient power handling.

 

This MOSFET utilizes Metal Oxide technology and is housed in a surface-mount D2PAK (TO-263) package, making it suitable for various power applications. The operating temperature range extends up to 150°C (TJ), providing thermal robustness.

 

Key electrical characteristics include a gate charge of 36nC and input capacitance of 1434pF, which are important parameters for switching performance. The gate threshold voltage is 5V at 250µA, and the maximum gate-source voltage is ±25V.

 

Designed for reliability, the STB20N65M5 is specified with a maximum power dissipation of 130W (Tc). Its compliance status includes RoHS3, MSL 1, and REACH unaffected, though these are currently unverified.

STB20N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB20N65M5 N-Channel MOSFET
Subcategory: N-Channel

STB20N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB20N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB20N65M5 Features

  • 650V drain-source voltage rating.
  • 18A continuous drain current.
  • 190mOhm maximum Rds On.
  • Surface mount D2PAK package.
  • 150°C maximum operating temperature.

STB20N65M5 Applications

  • Suitable for high voltage switching.
  • Power supply applications.
  • Motor control circuits.
  • General power switching.

STB20N65M5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB20N65M5?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current of the STB20N65M5?

The continuous drain current is 18A.

What is the maximum on-state resistance (Rds On) for this MOSFET?

The maximum Rds On is 190mOhm when measured at 9A drain current and 10V gate-source voltage.

What is the operating temperature range for the STB20N65M5?

The operating temperature range is up to 150°C (TJ).

What type of package is the STB20N65M5 in?

It is supplied in a D2PAK (TO-263) package, suitable for surface mounting.

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