STB200NF03T4 STB200NF03T4 is an N-Channel power MOSFET from STMicroelectronics with 30V drain-source voltage and 120A continuous drain current. It features a low 3 mOhm on-resistance and is housed in a D2PAK surface mount package.
Mfr Part #:

STB200NF03T4

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STB200NF03T4 is an N-Channel power MOSFET from STMicroelectronics with 30V drain-source voltage and 120A continuous drain current. It features a low 3 mOhm on-resistance and is housed in a D2PAK surface mount package.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB200NF03T4 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

STB200NF03T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB200NF03T4 Description

Short technical summary and product information.

The STB200NF03T4 is an N-Channel power MOSFET designed for high-current switching applications. It offers a drain-to-source voltage rating of 30V and a continuous drain current of 120A at 25°C. The device features a maximum on-resistance of just 3 mOhm when driven at 10V gate voltage with 80A drain current, enabling efficient power handling with minimal conduction losses.

 

Key electrical characteristics include a maximum gate charge of 150 nC at 10V and an input capacitance of 4950 pF at 25V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±20V. The device can dissipate up to 300W of power and operates over a junction temperature range of -55°C to 175°C.

 

The STB200NF03T4 is supplied in a TO-263-3 (D²Pak) surface mount package, also known as D2PAK, with 2 leads plus tab. This package is suitable for automated assembly processes and provides good thermal performance through the exposed tab.

STB200NF03T4 Quick Information

Product Type: Power MOSFET
Canonical Name: STB200NF03T4 N-Channel Power MOSFET
Subcategory: Single MOSFETs

STB200NF03T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB200NF03T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB200NF03T4 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 120A continuous drain current at 25°C.
  • Low 3 mOhm maximum on-resistance.
  • 300W maximum power dissipation capability.
  • Surface mount D2PAK (TO-263) package.

STB200NF03T4 Applications

  • High-current DC-DC converter circuits.
  • Motor drive and power management systems.
  • Battery protection and load switching.
  • Automotive and industrial power applications.

STB200NF03T4 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB200NF03T4?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating of the STB200NF03T4?

The continuous drain current is 120A at 25°C case temperature.

What is the on-resistance of the STB200NF03T4?

The maximum on-resistance is 3 mOhm at Vgs=10V and Id=80A.

What is the operating temperature range of the STB200NF03T4?

The operating junction temperature range is -55°C to 175°C.

What package is the STB200NF03T4 available in?

The STB200NF03T4 is available in a TO-263-3 (D2PAK) surface mount package.

Home
Account

Categories