| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,121 pcs
|
3121 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB18NM80 is a robust N-Channel MOSFET designed for power switching applications. It boasts a high drain-to-source voltage rating of 800V and can handle a continuous drain current of up to 17A at a case temperature.
Key electrical characteristics include a maximum on-resistance of 295mOhm at 8.5A and 10V, a gate threshold voltage of 5V at 250µA, and a gate charge of 70nC at 10V. The input capacitance (Ciss) is rated at 2070pF at 50V.
This MOSFET is constructed using MOSFET (Metal Oxide) technology and operates within a junction temperature range of -55°C to 150°C. It is packaged in a Surface Mount D²PAK (TO-263) package, suitable for various electronic designs.
The STB18NM80 is designed for applications requiring high voltage blocking capabilities and efficient power handling. Its specifications make it suitable for use in power supplies, motor control, and other demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).
150°C.
17A at case temperature.
295mOhm at 8.5A and 10V gate drive.
70nC at 10V.
2070pF at 50V.