| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
77,000 pcs
|
77000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21,745 pcs
|
21745 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB18NF25 is an N-Channel MOSFET with a drain-source breakdown voltage (Vdss) of 250V and a continuous drain current (Id) of 17A at 25°C. It features a low on-resistance (Rds On) of 165mOhm at 8.5A and 10V gate drive voltage.
This MOSFET is constructed using Metal Oxide Semiconductor technology and belongs to the STripFET™ II series. It has a maximum power dissipation of 110W (Tc) and an operating temperature range of -55°C to 175°C (TJ).
The STB18NF25 is housed in a TO-263-3, D²Pak package, suitable for surface mounting. Its gate charge (Qg) is 29.5nC at 10V, and its gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. The maximum gate-source voltage is ±20V.
This component is qualified for AEC-Q101 and is RoHS3 compliant, making it suitable for automotive and industrial applications requiring reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 250V.
The maximum continuous drain current is 17A at a case temperature of 25°C.
The maximum on-resistance is 165mΩ at a drain current of 8.5A and a gate-source voltage of 10V.
The maximum gate charge is 29.5nC at a gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The STB18NF25 is available in a TO-263-3, D²PAK surface-mount package.
The maximum power dissipation is 110W at case temperature.