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STB18N65M5 STB18N65M5 is an N-Channel power MOSFET from STMicroelectronics with 650V drain-source breakdown voltage and 15A continuous drain current in a D2PAK surface-mount package.
Mfr Part #:

STB18N65M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STB18N65M5 is an N-Channel power MOSFET from STMicroelectronics with 650V drain-source breakdown voltage and 15A continuous drain current in a D2PAK surface-mount package.
✓ Total Stock: 23,000 pcs
$ Price Range: $2.56

STB18N65M5 Available from 1 distributor

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✓ Non-Authorised
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23,000 pcs
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STB18N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB18N65M5 Description

Short technical summary and product information.

The STB18N65M5 is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage of 650V and a continuous drain current rating of 15A at case temperature. The device offers a maximum on-resistance of 220mOhm at 7.5A and 10V gate drive, enabling efficient power switching.

 

Key electrical characteristics include a maximum gate charge of 31nC at 10V and an input capacitance of 1240pF at 100V drain-source voltage. The MOSFET is designed for surface-mount assembly in a TO-263-3 (D2PAK) package, which provides good thermal performance with a maximum power dissipation of 110W.

 

The device operates over a junction temperature range up to 150°C and features a threshold voltage of 5V. It is suitable for various power conversion and switching applications requiring high voltage capability and low on-resistance.

STB18N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STB18N65M5 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

STB18N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

STB18N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB18N65M5 Features

  • 650V maximum drain-source voltage rating.
  • 15A continuous drain current capability.
  • 220mOhm low on-resistance at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package.
  • 110W maximum power dissipation at case temperature.

STB18N65M5 Applications

  • High-voltage power supply switching circuits.
  • DC-DC converter and inverter stages.
  • Motor control and drive applications.
  • Power factor correction (PFC) circuits.

STB18N65M5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB18N65M5?

The maximum drain-source voltage is 650V.

What is the continuous drain current rating?

The continuous drain current is 15A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 220mOhm at 7.5A drain current and 10V gate-source voltage.

What package is the STB18N65M5 available in?

It is available in a TO-263-3 (D2PAK) surface-mount package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

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