| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB18N60M6 is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V and a continuous drain current of 13A at case temperature.
The device features a maximum on-resistance of 280mOhm at 6.5A and 10V gate drive, and a gate charge of 16.8nC at 10V. Input capacitance is 650pF at 100V drain-source voltage. The gate threshold voltage is 4.75V maximum at 250µA.
The MOSFET is offered in a TO-263-3 (D2PAK) surface mount package, with a supplier device package of D2PAK (TO-263). Maximum power dissipation is 110W at case temperature, and the operating junction temperature range is -55°C to 150°C.
This component is suitable for power supply, motor control, and other high-voltage switching circuits requiring efficient power handling. The surface mount package enables compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
13A at case temperature.
280mOhm maximum at 6.5A and 10V.
16.8nC maximum at 10V.
-55°C to 150°C junction temperature.
TO-263-3 (D2PAK) surface mount.
650pF at 100V.