| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42,020 pcs
|
42020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB18N60M2 is a single N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power applications with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 13A at a case temperature (Tc).
This MOSFET features a low on-resistance (Rds On) of 280mOhm at 6.5A and 10V gate-source voltage, with a maximum gate charge (Qg) of 21.5nC at 10V. The input capacitance (Ciss) is rated at 791pF at 100V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage is ±25V.
Packaged in a surface-mount D2PAK (TO-263-3) format, the STB18N60M2 operates within a temperature range of -55°C to 150°C (TJ). Its maximum power dissipation is 110W at the case temperature (Tc).
This component utilizes MOSFET (Metal Oxide) technology and is suitable for various power switching and control applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
13A at case temperature.
280mOhm maximum at 6.5A and 10V gate drive.
-55°C to 150°C junction temperature.
Surface mount D2PAK (TO-263) package.
21.5nC at 10V.
791pF at 100V.