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STB17N80K5 N-Channel MOSFET rated at 800V drain-source voltage and 14A continuous drain current. Features low on-resistance of 340mOhm at 10V gate drive.
Mfr Part #:

STB17N80K5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET rated at 800V drain-source voltage and 14A continuous drain current. Features low on-resistance of 340mOhm at 10V gate drive.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB17N80K5 Available from 1 distributor

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✓ Non-Authorised
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1,000 pcs
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STB17N80K5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB17N80K5 Description

Short technical summary and product information.

The STB17N80K5 is an N-Channel enhancement-mode MOSFET from STMicroelectronics, designed for high-voltage switching applications. It is rated for a maximum drain-source voltage of 800V and a continuous drain current of 14A at 25°C case temperature.

 

Key electrical characteristics include a low maximum on-resistance of 340mOhm at a gate-source voltage of 10V and drain current of 7A, enabling efficient power conversion. The device has a maximum gate charge of 26nC at 10V, leading to fast switching. Input capacitance is 866pF at 100V drain-source voltage. Maximum power dissipation is 170W at case temperature.

 

The MOSFET is offered in the D2PAK (TO-263) surface-mount package, suitable for automated assembly. It is commonly used in switch-mode power supplies, lighting, and DC-DC converters where high voltage and efficiency are required.

STB17N80K5 Quick Information

Product Type: N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Canonical Name: STMicroelectronics STB17N80K5 N-Channel MOSFET
Subcategory: N-Channel MOSFET

STB17N80K5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB17N80K5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB17N80K5 Features

  • 800V drain-source voltage rating for high-voltage applications.
  • 14A continuous drain current capability at 25°C.
  • Low on-resistance of 340mOhm at 10V gate drive.
  • 26nC gate charge enables fast switching.
  • 170W maximum power dissipation in D2PAK package.

STB17N80K5 Applications

  • Used in switch-mode power supplies.
  • Suitable for power factor correction circuits.
  • Ideal for DC-DC converter designs.
  • Applied in LED lighting ballasts.
  • Works in resonant converter topologies.

STB17N80K5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB17N80K5?

800V.

What is the continuous drain current rating at 25°C?

14A.

What is the maximum power dissipation?

170W at case temperature.

What is the typical on-resistance?

Maximum 340mOhm at 7A drain current and 10V gate-source voltage.

What is the gate charge at 10V?

Maximum 26nC at 10V gate-source voltage.

What is the input capacitance at 100V?

Maximum 866pF at 100V drain-source voltage.

What is the maximum gate-source voltage?

±30V.

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