| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 806 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STB16NM50N is a high-performance N-channel Power MOSFET from the MDmesh II series. It is designed for demanding high efficiency converters and switching applications.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 15A at 25°C. The on-resistance (Rds On) is a maximum of 260mOhm at 7.5A and 10V gate-source voltage. Input capacitance (Ciss) is 1200pF at 50V, and gate charge (Qg) is 38nC at 10V.
This MOSFET features a maximum operating junction temperature of 150°C and a total power dissipation of 125W at 25°C. It is built using the second generation of MDmesh™ technology, which combines a new vertical structure with a strip layout for low on-resistance and gate charge.
The STB16NM50N is available in a D2PAK (TO-263-3) surface mount package. This package type is suitable for automated assembly processes and offers good thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
Surface mount D2PAK (TO-263-3).
150°C.
15A at case temperature 25°C.
260mOhm maximum at 7.5A and 10V gate drive.
38nC at 10V.
4V at 250µA.