| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB16N90K5 is a power MOSFET featuring an N-Channel configuration. It is designed for high voltage applications with a maximum drain-to-source voltage (Vdss) of 900V.
This MOSFET can handle a continuous drain current of 15A (Tc) and has a maximum power dissipation of 190W (Tc). Its on-resistance (Rds On) is rated at a maximum of 330mOhm at 7.5A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 29.7 nC (Max) at 10V and an input capacitance (Ciss) of 1027 pF (Max) at 100V.
The operating temperature range for this device is -55°C to 150°C (TJ). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package and features a surface mount type.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 900V.
The maximum continuous drain current is 15A at Tc.
The maximum on-resistance is 330mOhm at 7.5A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The device is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, a surface-mount D²PAK package.
The maximum gate charge is 29.7nC at a gate-source voltage of 10V.
It is an N-Channel MOSFET using metal-oxide technology.