| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,020 pcs
|
8020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB160N75F3 is a single N-Channel MOSFET with a drain-source voltage (Vdss) of 75V. It is designed for high-current applications, capable of handling up to 120A (Tc) continuous drain current.
Key electrical characteristics include a low on-resistance (Rds On) of 4mOhm at 60A and 10V, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The device features a maximum gate-to-source voltage (Vgs) of ±20V and a gate charge (Qg) of 85nC at 10V. Input capacitance (Ciss) is rated at 6750pF at 25V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and comes in a D2PAK (TO-263-3) surface mount package. The maximum power dissipation is 330W (Tc).
The STB160N75F3 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
D2PAK (TO-263) surface-mount package.
-55°C to 175°C junction temperature.
4V at 250µA.
4mOhm at 60A, 10V.
85nC at 10V.
6750pF at 25V.