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STB15810

The STMicroelectronics STB15810 is an N-channel Power MOSFET designed for switching applications. It offers a 100V drain-source voltage and 110A continuous drain current.

✓ Total Stock: 35,788 pcs

$ Price Range: $2.60

STB15810 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	30,000 pcs On Request	30000 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,774 pcs On Request	2774 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,014 pcs On Request	2014 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

STB15810 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	STMicroelectronics
Input Capacitance	8.115 nF
Mounting Type	Surface Mount

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STB15810 Description

Short technical summary and product information.

The STMicroelectronics STB15810 is an N-channel Power MOSFET utilizing STripFET™ F7 technology with an enhanced trench gate structure. This design results in very low on-state resistance and reduced internal capacitance and gate charge, enabling faster and more efficient switching.

Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 110A at 25°C. The typical on-resistance is 3.4 mΩ at 10V gate-source voltage, with a maximum of 3.9 mΩ. The device can handle pulsed drain currents up to 440A and has a total power dissipation of 250W at 25°C.

Operating junction and storage temperatures range from -55°C to 175°C. The MOSFET is housed in a D2PAK package suitable for surface mounting and is supplied on tape and reel.

This component is well-suited for various switching applications where high efficiency and low on-resistance are critical design parameters.

STB15810 Quick Information

Product Type: N-channel Power MOSFET

Canonical Name: STMicroelectronics STB15810 N-channel Power MOSFET

Subcategory: N-channel

STB15810 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STB15810 Estimated Pricing

Qty	Low	High
1+	$2.60	$2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB15810 Features

N-channel STripFET F7 Power MOSFET
100V Drain-Source Voltage
110A Continuous Drain Current
Ultra low on-resistance (3.4 mΩ typ.)
D2PAK Surface Mount Package

STB15810 Applications

Suitable for high-efficiency switching power supplies
Used in DC-DC converter circuits
Ideal for motor drive applications
Designed for automotive electrical systems
Applicable in power management modules

STB15810 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the STB15810?

The drain-source breakdown voltage is 100V.

What is the continuous drain current for the STB15810?

The continuous drain current is 110A at 25°C and 110A at 100°C.

What is the typical on-resistance of the STB15810?

The typical on-resistance is 3.4 mΩ at a gate-source voltage of 10V.

What is the operating temperature range for the STB15810?

The operating junction temperature range is -55°C to 175°C.

What package type is the STB15810 available in?

The STB15810 is available in a D2PAK package.

What is the RoHS status of the STB15810?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the STB15810?

The Moisture Sensitivity Level is 1 Unlimited.