STB150NF55T4 The STMicroelectronics STB150NF55T4 is an N-Channel MOSFET designed for high-current applications. It features a 55V drain-source voltage and a maximum continuous drain current of 120A.
Mfr Part #:

STB150NF55T4

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB150NF55T4 is an N-Channel MOSFET designed for high-current applications. It features a 55V drain-source voltage and a maximum continuous drain current of 120A.
✓ Total Stock: 2,261 pcs
$ Price Range: $2.56

STB150NF55T4 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,261 pcs
1261 pcs On Request 1 On Request On Request 1447+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

STB150NF55T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB150NF55T4 Description

Short technical summary and product information.

The STMicroelectronics STB150NF55T4 is a single N-Channel MOSFET with a drain-source voltage (Vdss) of 55V. It is designed for high-power applications, capable of handling a continuous drain current of 120A at the case temperature and a maximum power dissipation of 300W.

 

This MOSFET exhibits a low on-resistance (Rds On) of 6mOhm at 60A and 10V, ensuring efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 190 nC and an input capacitance (Ciss) of 4400 pF. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage (Vgs Max) of ±20V.

 

Packaged in a surface-mount D2PAK (TO-263-3) case, the STB150NF55T4 is suitable for various power management and switching applications. It operates within a temperature range of -55°C to 175°C (TJ).

 

The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

STB150NF55T4 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB150NF55T4 N-Channel MOSFET
Subcategory: Single

STB150NF55T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB150NF55T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB150NF55T4 Features

  • 55V drain-source voltage rating.
  • 120A continuous drain current.
  • 6mOhm maximum on-resistance.
  • 300W maximum power dissipation.
  • Surface mount D2PAK package.

STB150NF55T4 Applications

  • High-current motor drive circuits
  • DC-DC converter power stages
  • Automotive battery management systems
  • High-efficiency switched-mode power supplies
  • Industrial power switching applications

STB150NF55T4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB150NF55T4?

The maximum drain-source voltage (Vdss) is 55 V.

What is the continuous drain current rating?

The continuous drain current is 120A at the case temperature.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 6 mOhm when measured at 60A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the STB150NF55T4 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

Is the STB150NF55T4 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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