| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB14NM50N is a high-performance N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 500V. It is rated for a continuous drain current of 12A (Tc) and can dissipate up to 90W (Tc). The MOSFET features a low on-resistance (Rds On) of 320mOhm at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 6A.
Designed with Metal Oxide Semiconductor technology, this component has a gate charge (Qg) of 27nC at 10V and an input capacitance (Ciss) of 816pF at 50V. The operating temperature range is from -55°C to 150°C (TJ). The STB14NM50N is suitable for surface mounting and comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
This MOSFET is RoHS3 compliant and has an MSL rating of 1. Its specifications make it suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150°C (TJ).
TO-263-3 (D²Pak) surface mount.
500V.
12A at case temperature.
90W at case temperature.
4V at 100µA drain current.
320 milliohms at 6A drain current and 10V gate drive.