| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB14NK50ZT4 is an N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 500V and a continuous drain current of 14A at 25°C.
Key electrical characteristics include a maximum Rds On of 380mOhm at 6A and 10V gate drive voltage. The gate threshold voltage is 4.5V at 100µA, and the maximum gate-source voltage is ±30V. Input capacitance (Ciss) is rated at 2000 pF at 25V, and gate charge (Qg) is 92 nC at 10V.
This MOSFET has a maximum power dissipation of 150W and operates within a temperature range of -55°C to 150°C. It is manufactured using Metal Oxide (MOSFET) technology.
The device is housed in a surface-mount D2PAK package (TO-263-3, D²Pak), facilitating integration into compact electronic designs. It is specified as RoHS3 Compliant, with an MSL rating of 1, and is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
It is available in a D2PAK (TO-263) surface mount package.
-55°C to 150°C (junction temperature).
14A at 25°C.
380mOhm maximum at 6A and 10V gate drive.
92nC at 10V.
150W.