| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 732 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB14NK50Z-1 is an N-Channel MOSFET manufactured by STMicroelectronics, part of the FDmesh™ II series. It offers a robust 500V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of 14A at case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 380mOhm at 6A and 10V gate drive voltage. The device features a gate threshold voltage (Vgs(th)) of 4.5V at 100µA and a maximum gate-source voltage (Vgs) of ±30V. Input capacitance (Ciss) is rated at 2000pF at 25V, and gate charge (Qg) is 92nC at 10V.
This MOSFET is designed for through-hole mounting and comes in a TO-262-3 Long Leads, I²Pak, TO-262AA package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 150W (Tc). The RoHS status is compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-262-3 Long Leads, I²Pak, TO-262AA (I2PAK supplier package).
-55°C to 150°C (junction).
29A at 25°C case temperature.
380mOhm maximum at 6A, 10V.
4.5V maximum at 100µA.
190W at case temperature.