| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STB14N80K5 is a robust N-Channel MOSFET suitable for various power switching applications. It features a high drain-to-source voltage rating of 800V and can handle a continuous drain current of 12A at case temperature.
Key electrical characteristics include a maximum on-resistance of 445mOhm at 6A and 10V gate-source voltage, and a gate charge of 22nC. The input capacitance is rated at 620pF at 100V drain-source voltage. The device operates within a wide temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a surface-mount D²Pak (TO-263) package, facilitating integration into compact electronic designs. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, offering efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the STB14N80K5 is 800 V.
The STB14N80K5 has a continuous drain current of 12A (Tc).
The operating temperature range for the STB14N80K5 is -55°C to 150°C (TJ).
The STB14N80K5 is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The maximum on-resistance (Rds On) for the STB14N80K5 is 445mOhm at a drain current of 6A and gate-source voltage of 10V.