STB13NM60N The STMicroelectronics STB13NM60N is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 11A. It features a low Rds On of 360mOhm at 10V.
Mfr Part #:

STB13NM60N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB13NM60N is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 11A. It features a low Rds On of 360mOhm at 10V.
✓ Total Stock: 1,536 pcs
$ Price Range: $2.56

STB13NM60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,535 pcs
1535 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
1 pcs
1 pcs On Request 1 On Request On Request NO DC On Request On Request

STB13NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB13NM60N Description

Short technical summary and product information.

The STMicroelectronics STB13NM60N is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V. It is designed for efficient power switching applications, offering a maximum continuous drain current (Id) of 11A (Tc) and a maximum power dissipation of 90W (Tc).

 

Key electrical characteristics include a low on-resistance (Rds On) of 360mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 5.5A. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-to-source voltage is ±25V. Input capacitance (Ciss) is rated at 790pF at 50V, and gate charge (Qg) is 30nC at 10V.

 

This MOSFET operates at temperatures up to 150°C (TJ). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. The technology employed is MOSFET (Metal Oxide).

 

Compliance information indicates RoHS3 compliance and MSL 1 Unlimited. REACH status is listed as Unaffected.

STB13NM60N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB13NM60N N-Channel MOSFET
Subcategory: Single

STB13NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB13NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB13NM60N Features

  • 600V drain-to-source voltage rating.
  • 11A maximum continuous drain current.
  • 360mOhm maximum Rds On.
  • N-Channel MOSFET technology.
  • D2PAK surface mount package.

STB13NM60N Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for lighting control systems.
  • Applicable in power factor correction.

STB13NM60N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STB13NM60N?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 11A.

What is the Rds On at specified conditions?

The Rds On is a maximum of 360mOhm at 5.5A and 10V.

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

What package type is the STB13NM60N in?

It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is the STB13NM60N mounted?

It is a surface mount device.

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