| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 843 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB13NM50N is an N-Channel Power MOSFET from the MDmesh II technology family. It is designed for high efficiency switching applications, offering a low on-resistance of 320mOhm at 6A and 10V. This MOSFET features a 500V drain-source voltage and a continuous drain current of 12A at 25°C.
Key electrical characteristics include a gate charge of 30nC at 10V and an input capacitance of 960pF at 50V. The device operates at a maximum junction temperature of 150°C and has a power dissipation of 100W at 25°C.
The STB13NM50N is available in the D2PAK surface mount package, making it suitable for various electronic designs. Its robust construction and performance characteristics make it a reliable choice for demanding power conversion applications.
This MOSFET is 100% avalanche tested, ensuring reliability in demanding conditions. Its low input capacitance and gate charge contribute to high efficiency in switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The maximum continuous drain current is 12A at 25°C case temperature.
The datasheet specifies a maximum on-resistance of 0.32 ohms at 6A and 10V gate drive.
The maximum gate threshold voltage is 4V at 250µA.
The maximum input capacitance is 960 pF at 50V.
The maximum total gate charge is 30 nC at 10V.
It is available in a D2PAK (TO-263-3) surface mount package.