| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB13N80K5 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical specifications include a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 12A at 25°C. The on-resistance (Rds On) is rated at a maximum of 450mOhm at 6A and 10V gate drive. The gate charge (Qg) is a maximum of 29nC at 10V, and the input capacitance (Ciss) is 870pF at 100V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a D2PAK (TO-263) surface-mount package, facilitating integration into various electronic circuits. The power dissipation is a maximum of 190W at the case temperature.
The STB13N80K5 is suitable for power switching applications where high voltage breakdown and efficient current conduction are critical.