Mfr Part #:

STB13N60M2

The STB13N60M2 is an N-Channel MOSFET from STMicroelectronics designed for 600V operation. It features a 11A continuous drain current and a low Rds On of 380mOhm.

✓ Total Stock: 59,470 pcs

$ Price Range: $2.56

STB13N60M2 Available from 5 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	46,000 pcs On Request	46000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Xingangxin ✓ Non-Authorised Inventory information	5,450 pcs On Request	5450 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,020 pcs On Request	3020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

STB13N60M2 Description

Short technical summary and product information.

This STB13N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics. It offers a high drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 11A at a case temperature (Tc).

The MOSFET has a maximum on-resistance (Rds On) of 380mOhm at 5.5A and 10V gate-source voltage. Its gate-to-source voltage (Vgs) maximum is ±25V, with a threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 580pF at 100V.

Designed for surface mounting, this component comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc).

The STB13N60M2 is built using MOSFET (Metal Oxide) technology. It is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.

STB13N60M2 Quick Information

Product Type: MOSFET

Canonical Name: STB13N60M2 N-Channel MOSFET

Subcategory: N-Channel

STB13N60M2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STB13N60M2 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB13N60M2 Features

600V drain-to-source voltage.
11A continuous drain current.
380mOhm maximum Rds On.
Surface mount D2PAK package.
Operates to 150°C.

STB13N60M2 Applications

Switching power supply circuits.
Motor drive inverters and controllers.
DC-DC converter topologies.
Power factor correction stages.
LED lighting power stages.

STB13N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

600V.

What is the maximum continuous drain current?

11A at case temperature.

What is the typical on-resistance?

380mOhm maximum at 5.5A, 10V.

What is the gate charge?

17nC maximum at Vgs=10V.

What is the input capacitance?

580pF maximum at Vds=100V.

What package does this MOSFET come in?

TO-263-3 (D²Pak) surface-mount package.

What is the operating temperature range?

-55°C to +150°C junction temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	11A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 100 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	110W (Tc)
Rds On (Max) @ Id, Vgs	380mOhm @ 5.5A, 10V
Supplier Device Package	D²PAK (TO-263)
Supplier Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA