STB12NM60N-1 The STMicroelectronics STB12NM60N-1 is an N-Channel Power MOSFET designed for high efficiency converters. It features a 600V drain-source voltage and 10A continuous current capability.
Mfr Part #:

STB12NM60N-1

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB12NM60N-1 is an N-Channel Power MOSFET designed for high efficiency converters. It features a 600V drain-source voltage and 10A continuous current capability.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB12NM60N-1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 749 On Request On Request

STB12NM60N-1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Features
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB12NM60N-1 Description

Short technical summary and product information.

The STMicroelectronics STB12NM60N-1 is a second generation MDmesh™ Power MOSFET. This device implements a revolutionary technology that offers low on-resistance and low gate charge, making it suitable for demanding high efficiency converter applications.

 

Key electrical specifications include a 600V drain-source voltage (Vdss) and a maximum continuous drain current of 10A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 410mOhm at 5A and 10V gate-source voltage. Input capacitance (Ciss) is 960pF at 50V, and gate charge (Qg) is 30.5nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an I2PAK (TO-262-3 Long Leads) with through-hole mounting. The device is 100% avalanche tested, featuring low input capacitance, low gate charge, and low gate input resistance.

STB12NM60N-1 Quick Information

Product Type: N-Channel MOSFET
Series: MDmesh™ Second Generation
Canonical Name: STMicroelectronics STB12NM60N-1 N-Channel Power MOSFET
Subcategory: N-Channel

STB12NM60N-1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB12NM60N-1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB12NM60N-1 Features

  • 100% avalanche tested for reliability.
  • Low input capacitance and gate charge.
  • Low gate input resistance for efficiency.
  • 600V drain-source voltage rating.
  • 10A continuous drain current capability.

STB12NM60N-1 Applications

  • Used in switch-mode power supplies.
  • Suitable for lighting applications.
  • Ideal for adapter and charger circuits.
  • Applicable in high-voltage DC-DC converters.

STB12NM60N-1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STB12NM60N-1?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current (Id) is 10A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 410mOhm at 5A drain current and 10V gate-to-source voltage.

What package does the STB12NM60N-1 come in?

It comes in a TO-262-3 Long Leads (I2PAK) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the STB12NM60N-1 avalanche tested?

Yes, it is 100% avalanche tested.

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