| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB12NM60N is a second-generation MDmesh™ Power MOSFET designed for high efficiency converters. It utilizes a revolutionary vertical structure and strip layout to achieve low on-resistance and gate charge.
Key electrical specifications include a 600V drain-source voltage and a continuous drain current of 10A at 25°C. The Rds(on) is a maximum of 410mOhm at 5A and 10V gate drive. The device also features a gate threshold voltage of 4V at 250µA, a gate charge of 30.5nC at 10V, and an input capacitance of 960pF at 50V.
With a maximum power dissipation of 90W at 25°C and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications. It is housed in a TO-263AB, D²Pak surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 600V; the datasheet also specifies 650V at maximum junction temperature.
The continuous drain current is 10A at 25°C case temperature (6.3A at 100°C).
The maximum on-resistance is 410mΩ at a drain current of 5A and gate-source voltage of 10V.
It is available in a surface-mount D2PAK (TO-263AB) package, also known as TO-263-3.
The junction temperature range is -55°C to 150°C.
The maximum power dissipation is 90W at 25°C case temperature.