STB12NM50T4 The STMicroelectronics STB12NM50T4 is an N-Channel MOSFET designed for power applications. It features a 550V drain-to-source voltage and a 12A continuous drain current.
Mfr Part #:

STB12NM50T4

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB12NM50T4 is an N-Channel MOSFET designed for power applications. It features a 550V drain-to-source voltage and a 12A continuous drain current.
✓ Total Stock: 6,002 pcs
$ Price Range: $2.56

STB12NM50T4 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

STB12NM50T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB12NM50T4 Description

Short technical summary and product information.

The STMicroelectronics STB12NM50T4 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in a TO-263-3, D²Pak package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 550V and a continuous drain current (Id) of 12A. The on-resistance (Rds On) is a maximum of 350mOhm at 6A and 10V gate-source voltage. The input capacitance (Ciss) is 1000pF at 25V, and the gate charge (Qg) is 39nC at 10V.

 

This MOSFET operates within a temperature range of -65°C to 150°C (TJ) and has a maximum power dissipation of 160W (Tc). The gate-to-source voltage (Vgs) has a maximum rating of ±30V, with a gate threshold voltage (Vgs(th)) of 5V at 50µA.

 

Compliance data indicates RoHS3 compliance and an MSL of 1 Unlimited. REACH status is unaffected.

STB12NM50T4 Quick Information

Product Type: MOSFET
Series: STB12NM50
Canonical Name: STMicroelectronics STB12NM50T4 N-Channel MOSFET
Subcategory: Single

STB12NM50T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB12NM50T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB12NM50T4 Features

  • N-Channel MOSFET technology.
  • 550V drain-to-source voltage.
  • 12A continuous drain current.
  • 350mOhm maximum on-resistance.
  • Surface mount D2PAK package.

STB12NM50T4 Applications

  • Ideal for switch-mode power supplies (SMPS).
  • Used in high-voltage DC-DC converters.
  • Suitable for motor drive inverters.
  • Used in power factor correction (PFC) circuits.

STB12NM50T4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STB12NM50T4?

The maximum drain-source voltage (Vdss) is 550V.

What is the continuous drain current rating?

The continuous drain current (Id) is 12A at case temperature.

What is the on-resistance of the STB12NM50T4?

The maximum on-resistance (Rds(on)) is 350mOhm at 6A, 10V gate drive.

What package is the STB12NM50T4 available in?

It is available in a surface-mount D2PAK (TO-263-3) package.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 5V at 50µA.

What is the gate charge?

The maximum gate charge (Qg) is 39nC at 10V.

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