| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB12NK80ZT4 is a high-voltage N-Channel MOSFET. It is designed with a drain-to-source voltage (Vdss) rating of 800V and a continuous drain current (Id) of 10.5A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 750mOhm at 5.25A and 10V gate-source voltage, a gate threshold voltage (Vgs(th)) of 4.5V at 100µA, and a maximum gate-to-source voltage (Vgs) of ±30V. The input capacitance (Ciss) is rated at 2620pF at 25V, and the gate charge (Qg) is a maximum of 87nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It features a power dissipation of up to 190W (Tc). The technology used is MOSFET (Metal Oxide).
The STB12NK80ZT4 comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-263-3, D²Pak and TO-263AB surface mount package.
-55°C to 150°C (junction temperature).
4.5V maximum at 100µA drain current.
10.5A at case temperature.
750mOhm maximum at 5.25A drain current and 10V gate voltage.
87 nC maximum at 10V gate voltage.