STB12N60DM2AG The STMicroelectronics STB12N60DM2AG is an N-Channel MOSFET designed for discrete applications. It features a 600V drain-source voltage and a 10A continuous drain current.
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STB12N60DM2AG

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB12N60DM2AG is an N-Channel MOSFET designed for discrete applications. It features a 600V drain-source voltage and a 10A continuous drain current.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

STB12N60DM2AG Available from 1 distributor

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✓ Non-Authorised
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

STB12N60DM2AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB12N60DM2AG Description

Short technical summary and product information.

The STMicroelectronics STB12N60DM2AG is an N-Channel MOSFET belonging to the Discrete Semiconductor Products category. It is designed for various electronic applications requiring robust switching capabilities.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C. The on-resistance (Rds On) is a maximum of 430mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 5A. The gate threshold voltage (Vgs(th)) is 5V maximum at 250µA, and the maximum gate-to-source voltage is ±25V. Input capacitance (Ciss) is 614pF at 100V, and gate charge (Qg) is 14.5nC maximum at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. The maximum power dissipation is rated at 125W.

 

The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.

STB12N60DM2AG Quick Information

Product Type: N-Channel MOSFET
Canonical Name: STMicroelectronics STB12N60DM2AG N-Channel MOSFET
Subcategory: MOSFET

STB12N60DM2AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB12N60DM2AG Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB12N60DM2AG Features

  • 600V drain-source voltage rating.
  • 10A continuous drain current capability.
  • 430mOhm maximum on-resistance.
  • Surface mount TO-263 package.
  • RoHS3 compliant.

STB12N60DM2AG Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for high-voltage DC-DC converters.
  • Applied in lighting ballast designs.

STB12N60DM2AG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB12N60DM2AG?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current (Id) is 10A at 25°C.

What is the on-resistance of this MOSFET?

The Rds On is a maximum of 430mOhm at 5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STB12N60DM2AG in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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