| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,000 pcs
|
14000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
10,028 pcs
|
10028 pcs | On Request | 1 | On Request | On Request | 1422+ | On Request | On Request | |
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB120NF10T4 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 110A at 25°C. The on-resistance (Rds On) is rated at a low 10.5mOhm at 60A and 10V gate drive, ensuring efficient power handling with a maximum power dissipation of 312W (Tc).
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and belongs to the STripFET™ II series. Key electrical characteristics include a gate charge (Qg) of 233nC at 10V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum gate-source voltage (Vgs) is ±20V.
Designed for surface mounting, the STB120NF10T4 comes in a TO-263-3, D²Pak package. Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for various power switching applications where high current and voltage handling are required in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-263-3 (D²Pak) surface mount package.
-55°C to 175°C (junction temperature).
Maximum 10.5mOhm at 60A drain current and 10V gate-source voltage.
233nC at 10V gate voltage.
Maximum 5200pF at 25V drain-source voltage.
Maximum 4V at 250µA drain current.