Mfr Part #:

STB120N4LF6

The STMicroelectronics STB120N4LF6 is an N-Channel MOSFET with a 40V drain-to-source voltage and 80A continuous drain current. It features a low 4mOhm Rds On and is available in a surface mount D2PAK package.

✓ Total Stock: 213,150 pcs

$ Price Range: $2.56

STB120N4LF6 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	212,000 pcs On Request	212000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16
Fe Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	150 pcs On Request	150 pcs	On Request	1	On Request	On Request	19+	On Request	On Request

STB120N4LF6 Description

Short technical summary and product information.

This STMicroelectronics STB120N4LF6 is an N-Channel MOSFET designed for power switching applications. It offers a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at case temperature.

The MOSFET exhibits a low on-resistance (Rds On) of 4mOhm at 40A and 10V Vgs, ensuring efficient power transfer. Key electrical parameters include a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. Input capacitance (Ciss) is 4300 pF at 25V, and gate charge (Qg) is 80 nC at 10V Vgs.

With a maximum power dissipation of 110W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this device is suitable for demanding thermal environments. The technology employed is MOSFET (Metal Oxide).

The STB120N4LF6 comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting. It is RoHS3 compliant.

STB120N4LF6 Quick Information

Product Type: MOSFET

Canonical Name: STMicroelectronics STB120N4LF6 N-Channel MOSFET

Subcategory: N-Channel

STB120N4LF6 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STB120N4LF6 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB120N4LF6 Features

40V drain-to-source voltage rating.
80A continuous drain current capability.
Low 4mOhm on-resistance.
Surface mount D2PAK package.
RoHS3 compliant.

STB120N4LF6 Applications

Suitable for high-current power applications.
Ideal for switching power supplies.
Used in motor control circuits.
Applicable in power management systems.

STB120N4LF6 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage rating?

40V maximum.

What is the package type?

TO-263-3 (D²Pak) surface-mount.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the maximum continuous drain current?

80A at case temperature.

What is the on-resistance?

4mΩ maximum at 40A and 10V gate drive.

What is the gate threshold voltage?

3V maximum at 250µA.

What is the technology type?

MOSFET (Metal Oxide).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	80A (Tc)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	110W (Tc)
Rds On (Max) @ Id, Vgs	4 mOhm @ 40A, 10V
Supplier Device Package	D²PAK (TO-263)
Supplier Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA