| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB120N4F6 is an N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at a case temperature (Tc).
This MOSFET has a low on-resistance (Rds On) of 4 mOhm at 40A and 10V, with a gate charge (Qg) of 65nC at 10V. The input capacitance (Ciss) is 3850pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ).
The component is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB.
-55°C to 175°C (junction).
80A at case temperature (Tc).
4mOhm maximum at 40A and 10V gate drive.
65nC at 10V gate voltage.
3850pF at 25V drain-source voltage.