| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,000 pcs
|
19000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,544 pcs
|
9544 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
2,568 pcs
|
2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB11NM80T4 is an N-Channel MOSFET from the MDmesh™ series, designed for high-voltage applications. It features a maximum Drain to Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 150W.
Key electrical characteristics include a maximum on-resistance (Rds On) of 400mOhm at 5.5A and 10V, a gate charge (Qg) of 43.6 nC at 10V, and an input capacitance (Ciss) of 1630 pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, with a maximum gate-source voltage (Vgs) of ±30V.
This MOSFET operates within a temperature range of -65°C to 150°C (TJ). It is mounted using a surface mount technique and comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, also referred to as D2PAK.
The STB11NM80T4 is RoHS3 compliant and REACH unaffected. Its status as REACH Unaffected and RoHS3 Compliant should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
-65°C to 150°C (junction).
11A at 25°C case temperature.
400mOhm maximum at 5.5A, 10V.
43.6nC maximum at 10V.
1630pF maximum at 25V.