| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STB11NM60T4 is an N-channel MOSFET designed for power applications. It features a high drain-source voltage rating of 650V and a continuous drain current capability of 11A.
The MOSFET has a low on-resistance of 450mOhm at 5.5A and 10V gate-source voltage, contributing to efficient power handling. Its gate charge is rated at 30nC maximum at 10V, and input capacitance is 1000pF maximum at 25V.
Operating within a temperature range of -65°C to 150°C (TJ), this device is suitable for various environmental conditions. It utilizes MOSFET (Metal Oxide) technology and is packaged in a surface-mount D2PAK (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB) package.
The STB11NM60T4 is designed for applications requiring high voltage and current switching capabilities. Its surface-mount package facilitates integration into compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The maximum continuous drain current is 11A at case temperature.
The maximum on-resistance is 450mOhm at 5.5A drain current and 10V gate voltage.
The maximum gate charge is 30nC at 10V gate-source voltage.
The junction temperature range is -65°C to 150°C.
It is available in a surface-mount D2PAK (TO-263) package.
The maximum gate threshold voltage is 5V at 250µA drain current.