| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | 432 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB11NM60-1 is an N-Channel Power MOSFET belonging to the MDmesh™ family. It features a high drain-source voltage rating of 650V and a continuous drain current of 11A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 450mOhm at 5.5A and 10V gate-source voltage, and a gate charge (Qg) of 30nC at 10V. The device operates within a junction temperature range of -65°C to 150°C.
This MOSFET is housed in a TO-262-3 Long Leads, I²Pak, TO-262AA package, suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.
The MDmesh™ technology provides outstanding low on-resistance and excellent avalanche characteristics, making it suitable for increasing power density in high-voltage converters, enabling system miniaturization and higher efficiencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V (from datasheet).
The maximum continuous drain current is 11 A at 25°C case temperature.
The package type is TO-262-3 (I2PAK) through-hole.
The operating junction temperature range is -65°C to 150°C.
The maximum on-resistance is 450 mOhm at 5.5A and 10V gate drive.
The maximum gate threshold voltage is 5V at 250µA drain current.
The input capacitance is 1000 pF at 25V drain-source voltage.