| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB11N65M5 is an N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 9A. It offers a low on-resistance of 480mOhm at 4.5A and 10V gate-source voltage, making it suitable for efficient power switching.
This MOSFET is designed for surface mounting, utilizing the D2PAK (TO-263) package. It has a maximum power dissipation of 85W and an operating temperature range up to 150°C. Key electrical characteristics include a gate charge of 17nC and an input capacitance of 644pF.
With its robust specifications, the STB11N65M5 is well-suited for various power electronics applications requiring reliable switching performance and thermal management. Its N-Channel configuration and metal-oxide technology ensure efficient operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
9A.
480 mOhm maximum at 4.5A drain current and 10V gate voltage.
D²PAK (TO-263) surface-mount package.
Maximum junction temperature is 150°C.
5V typical at 250µA drain current.
85W at the case temperature.