| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB10N95K5 is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 950V. It is designed for surface mount applications and comes in a D2PAK (TO-263) package.
Key electrical characteristics include a maximum continuous drain current of 8A (Tc) and a maximum power dissipation of 130W (Tc). The on-resistance (Rds On) is specified at a maximum of 800mOhm at 4A and 10V gate-source voltage. The gate charge (Qg) is 22nC at 10V, and the gate-to-source voltage (Vgs) has a maximum rating of ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The component is suitable for various power switching applications where high voltage blocking capability is required.
Mounting is achieved via surface mount technology. The D2PAK package provides a robust solution for power applications. Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 950V.
The maximum continuous drain current is 8A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 800mOhm at a gate voltage of 10V and a drain current of 4A.
The operating junction temperature range is -55°C to 150°C.
The STB10N95K5 is available in a surface-mount TO-263-3 (D2PAK) package.
The maximum gate charge (Qg) is 22nC at a gate-to-source voltage of 10V.
The maximum input capacitance (Ciss) is 630pF at a drain-to-source voltage of 100V.