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STB10N65K3 The STMicroelectronics STB10N65K3 is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and 10A continuous drain current.
Mfr Part #:

STB10N65K3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB10N65K3 is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and 10A continuous drain current.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB10N65K3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 14+ On Request On Request
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STB10N65K3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB10N65K3 Description

Short technical summary and product information.

The STMicroelectronics STB10N65K3 is an N-Channel MOSFET belonging to the SuperMESH3™ series. It is designed for power switching applications and offers a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 10A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 1 Ohm at 3.6A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA, and the maximum gate-source voltage (Vgs) is ±30V.

 

This MOSFET has an input capacitance (Ciss) of 1180 pF at 25V and a gate charge (Qg) of 42 nC at 10V. It can dissipate up to 150W of power (Tc) and operates within a temperature range of -55°C to 150°C (TJ).

 

The component is housed in a D²PAK (TO-263) package, suitable for surface mounting. It is supplied in tape and reel packaging.

STB10N65K3 Quick Information

Product Type: MOSFET
Series: SuperMESH3™
Canonical Name: STMicroelectronics STB10N65K3 N-Channel MOSFET
Subcategory: N-Channel

STB10N65K3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB10N65K3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB10N65K3 Features

  • 650V drain-source voltage rating.
  • 10A continuous drain current capability.
  • 1 Ohm maximum on-resistance.
  • Surface mount D2PAK package.
  • Operates from -55°C to 150°C.

STB10N65K3 Applications

  • High-voltage DC-DC converters.
  • Switching power supplies.
  • Power factor correction circuits.
  • Motor control inverters.
  • LED lighting drivers.

STB10N65K3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB10N65K3?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current of the STB10N65K3?

The continuous drain current (Id) is 10A at 25°C.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 1 Ohm at 3.6A drain current and 10V gate drive voltage.

What is the operating temperature range of the STB10N65K3?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STB10N65K3 supplied in?

The STB10N65K3 is supplied in a D2PAK (TO-263) package, suitable for surface mounting.

Is the STB10N65K3 RoHS compliant?

The product is RoHS3 Compliant.

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