| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB100N6F7 is an N-channel Power MOSFET utilizing STripFET™ F7 technology. This device is designed for high-efficiency switching applications, offering very low on-state resistance and reduced internal capacitance for faster switching.
Key electrical specifications include a 60V drain-source voltage (Vds) and a continuous drain current (Id) of 100A at 25°C. The on-state resistance (Rds(on)) is a maximum of 5.6 mOhm at 50A and 10V gate drive voltage, with a typical value of 4.7 mOhm. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA.
This MOSFET operates across a wide temperature range from -55°C to 175°C (TJ). It is housed in a D²PAK (TO-263) surface-mount package, suitable for various board-level integrations. The device also offers high avalanche ruggedness and excellent figure of merit (FoM).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V minimum.
The maximum continuous drain current is 100A at 25°C and 75A at 100°C.
The maximum on-resistance is 5.6mOhm at 50A and 10V Vgs.
The operating junction temperature range is -55°C to 175°C.
The device is offered in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, commonly referred to as D²PAK (TO-263).
The maximum gate threshold voltage is 4V at 250µA drain current.
The single pulse avalanche energy is 200mJ at starting Tj of 25°C, ID=20A, VDD=30V.