| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB100N10F7 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 100V. It is designed for surface mount applications and comes in a D2PAK (TO-263) package.
This MOSFET offers a maximum continuous drain current of 80A (Tc) and a low on-resistance of 8mOhm at 40A, 10V. The gate charge (Qg) is 61 nC at 10V, and the input capacitance (Ciss) is 4369 pF at 50V. It operates within a temperature range of -55°C to 175°C (TJ).
The STB100N10F7 is suitable for various power switching and control applications where high current and voltage handling are required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100 V.
The maximum continuous drain current is 80 A at case temperature (Tc).
Maximum on-resistance is 8 mOhm at 40 A drain current and 10 V gate-source voltage.
The device is available in a TO-263-3 (D²Pak) surface mount package.
The operating junction temperature range is -55°C to 175°C.
Maximum gate charge is 61 nC at 10 V gate voltage.