| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The STMicroelectronics ST83003 is a high voltage, fast-switching NPN power transistor manufactured using multi-epitaxial planar technology. It offers high switching speeds and high voltage capability, making it suitable for applications like electronic ballasts for fluorescent lighting. The device is designed to be coupled with its complementary PNP transistor, the ST93003.
Key electrical ratings include a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 1.5A. The transistor has a maximum total power dissipation of 40W at 25°C. It is housed in a SOT-32-3 package, suitable for through-hole mounting.
This transistor utilizes a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Its high voltage capability and fast switching characteristics are beneficial in power supply and lighting control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 400V, and the collector-emitter voltage with base-emitter shorted (VCES) is 700V.
The ST83003 is available in a SOT-32-3 through-hole package.
The maximum operating junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
The minimum DC current gain (hFE) is 16 at 350mA collector current and 5V VCE, and 4 at 1A.
The maximum continuous collector current is 1.5A, with a peak current of 3A.
The maximum power dissipation is 40W at a case temperature of 25°C.