SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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390 pcs
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390 pcs | On Request | 1 | On Request | On Request | 530 | On Request | On Request |
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The STMicroelectronics ST2310HI is a high voltage, fast-switching NPN power transistor designed for demanding applications. Manufactured using Diffused Collector technology, it offers stable operation and low worst-case dissipation.
Key electrical specifications include a high Collector-Emitter Voltage (VCES) of 1500V and a Collector Current (IC) of 12A. It also boasts a high Collector-Emitter Sustaining Voltage (VCEO(sus)) of 600V. The device exhibits a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 3V and a Base-Emitter Saturation Voltage (VBE(sat)) of 1.1V at specified test conditions. DC Current Gain (hFE) ranges from 5.5 to 9.5 depending on the operating current and voltage.
This transistor is designed for applications requiring high voltage capability and fast switching speeds, such as horizontal deflection for monitors and high-end TVs. It features a high voltage capability exceeding 1500V and improved ruggedness.
The ST2310HI is supplied in a fully insulated ISOWATT218 package, compliant with U.L. standards for easy mounting. The package is through-hole mounted. Thermal data indicates a maximum operating junction temperature of 150°C and a thermal resistance junction-to-case of 2.3°C/W.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCES) with VBE = 0 is 1500 V.
The maximum Collector Current (IC) is 12 A.
The ST2310HI is supplied in the ISOWATT218 package.
The maximum operating junction temperature (Tj) is 150 °C.
Applications include horizontal deflection for monitors 17" and high end TVs.
