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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics ST1510FX is a single NPN bipolar junction transistor (BJT) designed for power applications. It features a high collector-emitter voltage rating of 750V and a maximum collector current of 12A, with a power dissipation of 62W. The transistor is housed in an ISOWATT-218FX package and is designed for through-hole mounting.
Key electrical characteristics include a minimum DC current gain (hFE) of 6.5 at 6A collector current and 5V collector-emitter voltage. The Vce saturation is a maximum of 2V at 1.5A base current and 6A collector current. It operates at a maximum junction temperature of 150°C.
This component is suitable for various power switching and amplification circuits where high voltage handling is required. Its through-hole mounting facilitates integration into traditional PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.86 | $3.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The ST1510FX is an NPN bipolar junction transistor.
The maximum collector-emitter voltage is 750V.
The maximum collector current is 12A.
The power dissipation is 62W.
The minimum DC current gain (hFE) is 6.5 at Ic=6A and Vce=5V.
The maximum Vce saturation voltage is 2V at Ib=1.5A and Ic=6A.
The maximum operating junction temperature is 150°C.
The ST1510FX is available in an ISOWATT-218FX through-hole package.