SSW2N60BTM The On Semiconductor SSW2N60BTM is an N-Channel Power MOSFET designed for surface mount applications. It offers a 600V drain-to-source voltage and 2A current rating.
Mfr Part #:

SSW2N60BTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SSW2N60BTM is an N-Channel Power MOSFET designed for surface mount applications. It offers a 600V drain-to-source voltage and 2A current rating.
✓ Total Stock: 2,400 pcs
$ Price Range: $2.56

SSW2N60BTM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,400 pcs
2400 pcs On Request 1 On Request On Request 07+ On Request On Request

SSW2N60BTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SSW2N60BTM Description

Short technical summary and product information.

The On Semiconductor SSW2N60BTM is an N-Channel Power MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It features a robust design with a 600V drain-to-source voltage (Vdss) and a maximum continuous drain current of 2A at the case temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, making it suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 17 nC at 10V and a maximum on-resistance (Rds On) of 5 Ohm at 1A and 10V. The operating temperature range is from -55°C to 150°C (TJ).

 

With a maximum gate-to-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 4V at 250µA, the SSW2N60BTM is designed for reliable performance. It has a power dissipation rating of 54W at the case temperature and 3.13W at ambient temperature.

 

This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. Its REACH status is unaffected. The SSW2N60BTM is a versatile component for power switching applications.

SSW2N60BTM Quick Information

Product Type: MOSFET
Canonical Name: On Semiconductor SSW2N60BTM N-Channel Power MOSFET
Subcategory: N-Channel

SSW2N60BTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSW2N60BTM Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSW2N60BTM Features

  • 600V drain-to-source voltage rating.
  • 2A continuous drain current.
  • Surface mount TO-263-3 package.
  • N-Channel MOSFET technology.
  • Wide operating temperature range.

SSW2N60BTM Applications

  • High-voltage power supply switching circuits.
  • DC-DC converter output stages.
  • Motor drive and inverter applications.
  • Lighting ballasts and LED drivers.

SSW2N60BTM FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the SSW2N60BTM?

The drain-to-source voltage (Vdss) is 600V.

What is the maximum continuous drain current for the SSW2N60BTM?

The maximum continuous drain current is 2A at the case temperature.

What package type is the SSW2N60BTM available in?

The SSW2N60BTM is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

Is the SSW2N60BTM RoHS compliant?

Yes, the SSW2N60BTM is RoHS3 compliant.

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