| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,997 pcs
|
9997 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor SSU1N50BTU is a high-performance N-Channel MOSFET designed for various power management applications. It features a maximum drain-source voltage (Vdss) of 520V and a continuous drain current (Id) of 1.3A at 25°C (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 5.3 Ohms at 650mA and 10V gate-source voltage, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum gate-source voltage (Vgs) of ±30V. The input capacitance (Ciss) is rated at 340 pF at 25V, and the gate charge (Qg) is 11 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-251-3 Short Leads, IPak, TO-251AA package, suitable for through-hole mounting. The maximum power dissipation is 2.5W (Ta) and 26W (Tc).
The SSU1N50BTU is RoHS3 compliant, indicating adherence to environmental standards. Its robust design and specifications make it suitable for applications requiring reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
520 V
TO-251-3 Short Leads, also known as IPak or TO-251AA
-55°C to 150°C junction temperature
4 V at a drain current of 250 µA
2.5 W at ambient temperature and 26 W at case temperature