| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Voltage |
The Vishay Dale SST4119-T1-E3 is an N-Channel Junction Field-Effect Transistor (JFET) designed for high-impedance applications. It features a breakdown voltage of 40V and a maximum power dissipation of 350mW at 25°C.
This JFET has a typical drain current (IDSS) of 200µA at 10V and an input capacitance (Ciss) of 3pF at 10V. The gate-source cutoff voltage (VGSoff) is typically 2V at 1nA.
The device operates over a wide temperature range of -55°C to 175°C. It is housed in a TO-236-3, SC-59, SOT-23-3 package, making it suitable for surface mount assembly.
Key features include its N-channel configuration, surface mount capability, and a broad operating temperature range, making it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate-source breakdown voltage (V(BR)GSS) is a minimum of -40V.
The typical gate-source cutoff voltage (VGSoff) is 2V at 1nA.
The drain current (IDSS) is 200µA at 10V.
The maximum input capacitance (Ciss) is 3pF at 10V.
The maximum power dissipation is 350mW at 25°C.
The operating temperature range is -55°C to 175°C.
The SST4119-T1-E3 is an N-Channel JFET.