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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Microchip Technology SST39VF512-70-4C-NHE-T is a 512Kbit (64K x 8) parallel FLASH memory device designed for reliable non-volatile storage. It offers a fast access time of 70ns and operates over a supply voltage range of 2.7V to 3.6V. The device supports uniform 4 KByte sector erase, byte-program, and chip-erase operations with typical sector-erase time of 18ms, chip-erase time of 70ms, and byte-program time of 14µs.
This FLASH memory delivers 100,000 typical program/erase cycles and data retention greater than 100 years, making it suitable for long-term code and data storage. Typical active current is 5 mA, with a standby current of just 1 µA. The device is provided in a 32-PLCC (11.43x13.97 mm) surface-mount package with J-Leads, and is also available in a 32-lead TSOP (8mm x 14mm) package.
The SST39VF512-70-4C-NHE-T operates within a temperature range of 0°C to 70°C (TA) and is designed for applications requiring efficient code shadowing, firmware updates, and data logging. Its parallel interface simplifies integration with microcontrollers and processors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
32-PLCC (11.43x13.97mm) with J-Leads. Also available in 32-lead TSOP (8mm x 14mm).
0°C to 70°C (TA).
512Kbit (64K x 8).
100,000 typical program/erase cycles.
Greater than 100 years.
70 ns.