| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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493 pcs
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493 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The SST39VF040-70-4I-NHE is a 4Mbit CMOS Multi-Purpose Flash (MPF) memory manufactured using SST's SuperFlash technology. It is organized as 512K x 8 bits.
This device offers a fast read access time of 70 ns and supports single voltage read and write operations within a 2.7V to 3.6V power supply range. Key features include high reliability with an endurance of 100,000 cycles and data retention exceeding 100 years. It also boasts low power consumption, with typical active current of 5 mA and standby current of 1 µA at 14 MHz.
The SST39VF040-70-4I-NHE supports sector erase capability with uniform 4 KByte sectors. Fast erase and program operations are supported, including a sector erase time of 18 ms and a byte program time of 14 µs. End-of-write detection is provided via Toggle Bit or Data# Polling.
Available in a 32-lead TSOP package (8mm x 14mm), this flash memory conforms to JEDEC standard pinouts and command sets, making it suitable for various embedded applications requiring non-volatile data storage.
The SST39VF040-70-4I-NHE has a memory size of 4 Mbit.
This flash memory is organized as 512K x 8 bits.
The SST39VF040-70-4I-NHE operates from a supply voltage of 2.7V to 3.6V for write and read operations.
The maximum read access time for the SST39VF040-70-4I-NHE is 70 ns.
The SST39VF040-70-4I-NHE has a typical endurance of 100,000 program/erase cycles.
The data retention for the SST39VF040-70-4I-NHE is greater than 100 years.
The SST39VF040-70-4I-NHE is available in a 32-lead TSOP package with dimensions of 8mm x 14mm.